Physical and digital books, media, journals, archives, and databases.
Results include
  1. Characterization of indium and solder bump bonding for pixel detectors [electronic resource].

    Washington, D.C. : United States. Dept. of Energy. Office of Energy Research ; Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2000

    A review of different bump-bonding processes used for pixel detectors is given. A large scale test on daisy-chained components from two vendors has been carried out at Fermilab to characterize the yield of these processes. The vendors are Advanced Interconnect Technology Ltd. (AIT) of Hong Kong and MCNC in North Carolina, US. The results from this test are presented and technical challenges encountered are discussed.

    Online OSTI

  2. A study of thermal cycling and radiation effects on indium and solder bump bonding [electronic resource].

    Washington, D.C. : United States. Dept. of Energy. Office of Energy Research ; Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2001

    The BTeV hybrid pixel detector is constructed of readout chips and sensor arrays which are developed separately. The detector is assembled by flip-chip mating of the two parts. This method requires the availability of highly reliable, reasonably low cost fine-pitch flip-chip attachment technology. We have tested the quality of two bump-bonding technologies; indium bumps (by Advanced Interconnect Technology Ltd. (AIT) of Hong Kong) and fluxless solder bumps (by MCNC in North Carolina, USA). The results have been presented elsewhere[1]. In this paper we describe tests we performed to further evaluate these technologies. We subjected 15 indium bump-bonded and 15 fluxless solder bump-bonded dummy detectors through a thermal cycle and then a dose of radiation to observe the effects of cooling, heating and radiation on bump-bonds.

    Online OSTI

  3. A study of thermal cycling and radiation effects on indium and solder bump bonds [electronic resource].

    Washington, D.C. : United States. Dept. of Energy. Office of Energy Research ; Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2001

    The BTeV hybrid pixel detector is constructed of readout chips and sensor arrays which are developed separately. The detector is assembled by flip-chip mating of the two parts. This method requires the availability of highly reliable, reasonably low cost fine-pitch flip-chip attachment technology. We have tested the quality of two bump-bonding technologies; indium bumps (by Advanced Interconnect Technology Ltd. (AIT) of Hong Kong) and fluxless solder bumps (by MCNC in North Carolina, USA). The results have been presented elsewhere [1]. In this paper we describe tests we performed to further evaluate these technologies. We subjected 15 indium bump-bonded and 15 fluxless solder bump-bonded dummy detectors through a thermal cycle and then a dose of radiation to observe the effects of cooling, heating and radiation on bump-bonds. We also exercised the processes of HDI mounting and wire bonding to some of the dummy detectors to see the effect of these processes on bump bonds.

    Online OSTI

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