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  1. ICP etching of GaAs via hole contacts [electronic resource].

    Washington, D.C. : United States. Dept. of Energy. ; Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1996

    Deep etching of GaAs is a critical process step required for many device applications including fabrication of through-substrate via holes for monolithic microwave integrated circuits (MMICs). Use of high-density plasmas, including inductively coupled plasmas (ICP), offers an alternative approach to etching vias as compared to more conventional parallel plate reactive ion etch systems. This paper reports ICP etching of GaAs vias at etch rates of about 5.3 μm/min with via profiles ranging from highly anistropic to conical.

    Online OSTI

  2. Critical analysis of via hole etching with a manufacturable RIE process using SiCl{sub 4}/BCl{sub 3}/Cl{sub 2} chemistries [electronic resource].

    Washington, D.C. : United States. Dept. of Energy. ; Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1993

    A manufacturable RIE (reactive ion etching) process for via hole etching is critically analyzed to optimize a non-CFC, environmentally favorable etch process. The strong effect on via hole profile and etch rates due to various thicknesses of wafer carriers that are used for mechanical support during the processing of 50--100 μm GaAs wafers and of the corresponding cathode covering materials are studied. An optimized via hole process that uses a single-apply photoresist (PR) process with high etch rates is presented.

    Online OSTI

  3. Ultrafast Enhancement of Ferromagnetism via Photoexcited Holes inGaMnAs [electronic resource].

    Washington, D.C. : United States. Dept. of Energy. ; Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2007

    We report on the observation of ultrafast photo-enhanced ferromagnetism in GaMnAs. It is manifested as a transient magnetization increase on a 100-ps time scale, after an initial sub-ps demagnetization. The dynamic magnetization enhancement exhibits a maximum below the Curie temperature {Tc} and dominates the demagnetization component when approaching {Tc}. We attribute the observed ultrafast collective ordering to the p-d exchange interaction between photoexcited holes and Mn spins, leading to a correlation-induced peak around 20K and a transient increase in {Tc}.

    Online OSTI

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