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  1. Nonradiative recombination in semiconductors

    Abakumov, V. N., 1936-
    Amsterdam ; New York : North-Holland ; New York, NY, USA : Sole distributors for the USA and Canada, Elsevier Science Pub. Co., 1991.

    In recent years, great progress has been made in the understanding of recombination processes controlling the number of excess free carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensive theoretical description of these processes. The authors have selected a number of experimental results which elucidate the underlying physical problems and enable a test of theoretical models. The following topics are dealt with: phenomenological theory of recombination, theoretical models of shallow and deep localized states, cascade model of carrier capture by impurity centers, capture restricted by diffusion, multiphonon processes, Auger processes, effect of electric field on capture and thermal emission of carriers.


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