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  1. Nonradiative recombination in semiconductors

    Abakumov, V. N., 1936-
    Amsterdam ; New York : North-Holland ; New York, NY, USA : Sole distributors for the USA and Canada, Elsevier Science Pub. Co., 1991.

    In recent years, great progress has been made in the understanding of recombination processes controlling the number of excess free carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensive theoretical description of these processes. The authors have selected a number of experimental results which elucidate the underlying physical problems and enable a test of theoretical models. The following topics are dealt with: phenomenological theory of recombination, theoretical models of shallow and deep localized states, cascade model of carrier capture by impurity centers, capture restricted by diffusion, multiphonon processes, Auger processes, effect of electric field on capture and thermal emission of carriers.

  2. Recombination in semiconductors

    Landsberg, Peter T. (Peter Theodore)
    Cambridge ; New York : Cambridge University Press, 1991.

    This book is devoted to the main aspects of the physics of recombination in semiconductors. It is the first book to deal exclusively and comprehensively with the subject, and as such is a self-contained volume, introducing the concepts and mechanisms of recombination from a fundamental point of view. Professor Landsberg is an internationally acknowledged expert in this field, and while not neglecting the occasional historical insights, he takes the reader to the frontiers of current research. Following initial chapters on semiconductor statistics and recombination statistics, the text moves on to examine the main recombination mechanisms: Auger effects, impact ionisation, radiative recombination, defect and multiphonon recombination. The final chapter deals with the topical subject of quantum wells and low-dimensional structures. Altogether the book covers a remarkably wide area of semiconductor physics. The book will be of importance to physicists, electronic engineers and applied mathematicians who are studying or researching the physics and applications of semiconductors. Some parts of the book will be accessible to final-year undergraduates.

    Online Cambridge Core

  3. Measurement of the Temperature-Dependent Recombination Lifetimes in Photovoltaic Materials [electronic resource].

    Washington, D.C. : United States. Dept. of Energy ; Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1998

    Lifetime spectroscopy is a valuable tool for the characterization of photovoltaic materials. Measured lifetime values are inherently dependent on the defect and impurity densities present in the material. Injection-level and temperature dependencies of the recombination rate further characterize the material and possibly provide information for the identification of specific impurities. Also, trapping levels may be determined by observing their temperature-dependent thermal emission. Measured examples include surface-passivated, float-zone silicon and high-quality, undoped GaAs. Excess-carrier-decay curves are recorded from 80 to 300 K using a lifetime-measurement technique called ultrahigh frequency photoconductive decay

    Online OSTI


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